13N10 datasheet, fqb13n10 equivalent, Fairchild Semiconductor

Features and benefits

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* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanch.

Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D TM Features
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Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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